Crystal-Chemical Interpretation of Amphoteric Influence of Bismuth Impurity in Tin Telluride
Journal Title: Фізика і хімія твердого тіла - Year 2014, Vol 15, Issue 4
Abstract
Models of point defects of doped by bismuth tin telluride crystals considering amphoteric influence of dopant ( ) have been specified. The influence of disproportionation of charge state of impurity on the conductivity type has been determined. Based on the proposed crystal-quasichemical formulae dependences of concentrations of point defects, the Hall concentration of current carriers on dopant content have been calculated.
Authors and Affiliations
D. M. Freik, L. V. Turovska, I. V. Horichok, O. M. Matkivskyi
Keywords
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