MATHEMATICAL MODELING OF THE DETERMINISTIC CHAOS RADIO-MEASURING OSCILLATOR BASED ON A TRANSISTOR STRUCTURE WITH NEGATIVE RESISTANCE
Journal Title: Вісник Кременчуцького національного університету імені Михайла Остроградського - Year 2018, Vol 1, Issue 109
Abstract
Purpose. To research how the non-linearity of the bipolar and field-effect transistor structure static I-V curve affects dynamics of the electric oscillation in the deterministic chaos radio-measuring oscillator. The developing chaos theory and designing deterministic chaos transistor oscillators are urgent scientific and technical tasks. Such requirements are to be fulfilled when designing the deterministic chaos radio-measuring oscillators: 1) structural persistence of self-oscillating chaotic system attractors in phase area; 2) high sensibility to the variation of parameters and/or initial conditions of the system; 3) sufficient amplitude or power of chaotic oscillation. Methodology. The deterministic chaos oscillator based on a bipolar and field-effect transistor structure with negative resistance is proposed and examined. The Anishchenko-Astakhov modified mathematical model was applied for describing the chaotic oscillation dynamics. Chaotic dynamics of the radio-measuring oscillator was studied by mathematical modeling. Results. Phase portraits of the oscillator, time diagrams and amplitude-frequency spectra of chaotic oscillations were obtained. The computer circuitry PSpice model of the bipolar and field-effect transistor structure with negative resistance was developed. The static I-V curve series graph for the bipolar and field-effect transistor structure with negative resistance was constructed. The frequency-response characteristics for active and reactive components of the bipolar and field-effect transistor structure impedance were plotted. The temperature effect for characteristics of the bipolar and field-effect transistor structure with negative resistance was examined. Originality. A new equation for nonlinear approximating the static I-V curve of the bipolar-field transistor structure with negative resistance was proposed. Practical value. The experimental breadboard of radio-measuring oscillator was developed, experimental research results were obtained. References 10, tables 0, figures 15.
Authors and Affiliations
A. Semenov
Keywords
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- EP ID EP659634
- DOI 10.30929/1995-0519.2018.2.p1.15-21
- Views 69
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