STUDY THE EFFECT OF CHANNEL DOPING CONCENTRATION AND SOI LAYER THICKNESS ON ELECTRICAL BEHAVIOUR OF SOI MOSFET USING SILVACO TCAD SIMULATOR Journal title: International Journal of Management, IT and Engineering Authors: Sapna and Bijender Mehandia Subject(s): Computer and Information Science, Engineering, Management Science, Development Studies
MOSFET Scaling and Small Geometry Effects Journal title: International Journal of Engineering Sciences & Research Technology Authors: Mr. Sanjeev Kumar Singh Subject(s):
Design and Simulation Elements of Analytical Microsystem-on-Chip With the Structures "Silicon-on-Insulator" Journal title: Фізика і хімія твердого тіла Authors: V. V. Dovgiy, I. T. Kohut, V. I. Golota Subject(s):
SEMICONDUCTOR INTEGRATED ELEMENTS BASED ON NANOSTRUCTURES SILICON FOR INFORMATION SYSTEMS Journal title: Сенсорна електроніка і мікросистемні технології Authors: A. A. Druzhinin, I. T. Kogut, A. Yu. Khoverko, V. I. Golota, Yu. M. Khoverko Subject(s):
Schematic-Topological Modeling of the SOI CMOS Ring Oscillators for Sensor Microsystems on Chip Journal title: Фізика і хімія твердого тіла Authors: M.V. Kotyk, V.V. Dovgyi, I. T. Kogut, V.I. Holota Subject(s):
